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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3170 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage Emitter-base voltage E SEM NG Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 7 7 15 UNIT V V V A A Open base Open collector Collector current-peak Ta=25ae 2 W 40 150 -55~150 ae ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 400 TYP. 2SC3170 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V 1.0 1.5 100 100 |I |I V V A A Switching times ton tstg tf Fall time CHA IN Storage time Turn-on time E SEM NG OND IC TOR UC 8 1.0 3.0 1.0 MHz |I |I |I s s s IC=3A ; IB1=-IB2=0.6A VCC=100V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3170 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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